[I-5-1] High-Mobility a-IGZO Thin-Film Transistor Using Ta₂O₅ Gate Dielectric

C. J. Chiu¹、S. P. Chang¹、C. Y. Lu¹、S. J. Chang¹ (1.National Cheng Kung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.I-5-1