[I-6-2] Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation

H. Umeda¹、T. Takizawa¹、Y. Anda¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.I-6-2