[I-6-3] AlGaN/GaN MOS-HEMT Single-Chip DC/DC Boost Converter Using High-k Gd₂O₃ Insulator

C. W. Yang¹、S. W. Peng¹、C. K. Lin¹、H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.I-6-3