[I-6-4] Reduction of current collapse in AlGaN/GaN HEMTs using thick GaN cap layer

H. Chonan¹、Y. Sakamura²、G. Piao²、T. Ide²、M. Shimizu²、Y. Yano³、H. Nakanishi¹ (1.Tokyo Univ. of Sci.、2.AIST、3.Taiyo Nippon Sanso Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.I-6-4