[I-6-4] Reduction of current collapse in AlGaN/GaN HEMTs using thick GaN cap layer

H. Chonan¹, Y. Sakamura², G. Piao², T. Ide², M. Shimizu², Y. Yano³, H. Nakanishi¹ (1.Tokyo Univ. of Sci., 2.AIST, 3.Taiyo Nippon Sanso Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.I-6-4