Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang; T. Sudhiranjan; X. Wang; H. Y. Zheng; T. K. Chan; T. Osipowicz; Y. L. Foo

doi:https://doi.org/10.7567/SSDM.2010.I-6-5

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang¹, T. Sudhiranjan¹, X. Wang², H. Y. Zheng², T. K. Chan³, T. Osipowicz³, Y. L. Foo¹ (1.Inst. of Materials Res. And Eng., 2.Singapore Inst. Of Manufacturing Tech., 3.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.I-6-5

2010 International Conference on Solid State Devices and Materials

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation