Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang; T. Sudhiranjan; X. Wang; H. Y. Zheng; T. K. Chan; T. Osipowicz; Y. L. Foo

doi:https://doi.org/10.7567/SSDM.2010.I-6-5

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang¹、T. Sudhiranjan¹、X. Wang²、H. Y. Zheng²、T. K. Chan³、T. Osipowicz³、Y. L. Foo¹ (1.Inst. of Materials Res. And Eng.、2.Singapore Inst. Of Manufacturing Tech.、3.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.I-6-5

2010 International Conference on Solid State Devices and Materials

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation