Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure

H. Da; K. T. Lam; S. K. Chin; G. S. Samudra; Y. C. Yeo; G. Liang

doi:https://doi.org/10.7567/SSDM.2010.J-5-2

[J-5-2] Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure

H. Da¹、K. T. Lam¹、S. K. Chin²、G. S. Samudra¹、Y. C. Yeo¹、G. Liang¹ (1.National Univ. of Singapore、2.Institute of High Performance Computing , Singapore)

https://doi.org/10.7567/SSDM.2010.J-5-2

2010 International Conference on Solid State Devices and Materials

[J-5-2] Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure