[J-5-2] Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure

H. Da¹, K. T. Lam¹, S. K. Chin², G. S. Samudra¹, Y. C. Yeo¹, G. Liang¹ (1.National Univ. of Singapore, 2.Institute of High Performance Computing , Singapore)

https://doi.org/10.7567/SSDM.2010.J-5-2