[J-7-4] Lateral GaAs nanowires with triangular and trapezoidal cross-sections grown on (311)B and (001) substrates

G. Zhang¹、K. Tateno¹、H. Gotoh¹、T. Sogawa¹ (1.NTT Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.J-7-4