Effects of surface and crystalline defects on reverse characteristics of 4H-SiC JBS diodes

T. Katsuno; Y. Watanabe; H. Fujiwara; M. Konishi; T. Yamamoto; T. Endo

doi:https://doi.org/10.7567/SSDM.2010.K-3-3

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[K-3-3] Effects of surface and crystalline defects on reverse characteristics of 4H-SiC JBS diodes

T. Katsuno¹, Y. Watanabe¹, H. Fujiwara², M. Konishi², T. Yamamoto³, T. Endo³ (1.Toyota Central R&D Labs., Inc., 2.Toyota Motor Corp., 3.DENSO Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.K-3-3

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