[K-3-4] High hole current achievement of hydrogen-terminated diamond MOSFETs coated with Poly-tetra-fluoro-ethylene

S. Sato¹, K. Tsuge¹, T. Tsuno¹, T. Ono¹, H. Kawarada¹ (1.Waseda Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.K-3-4