Kinetics of strain relaxation in lattice-mismatched In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs heteroepitaxy

T. Sasaki; H. Suzuki; M. Takahasi; S. Fujikawa; I. Kamiya; Y. Ohshita; M. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2010.K-5-3

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[K-5-3] Kinetics of strain relaxation in lattice-mismatched In_xGa_1-xAs/GaAs heteroepitaxy

T. Sasaki¹, H. Suzuki², M. Takahasi³, S. Fujikawa³, I. Kamiya¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Tech. Inst., 2.Univ. of Miyazaki, 3.JAEA , Japan)

https://doi.org/10.7567/SSDM.2010.K-5-3

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2010 International Conference on Solid State Devices and Materials

[K-5-3] Kinetics of strain relaxation in lattice-mismatched InxGa1-xAs/GaAs heteroepitaxy

[K-5-3] Kinetics of strain relaxation in lattice-mismatched In_xGa_1-xAs/GaAs heteroepitaxy