[K-6-5] High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si

M. Deura¹, Y. Kondo¹, M. Takenaka¹, S. Takagi¹, Y. Shimogaki¹, Y. Nakano¹, M. Sugiyama¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2010.K-6-5