[K-6-5] High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si

M. Deura¹、Y. Kondo¹、M. Takenaka¹、S. Takagi¹、Y. Shimogaki¹、Y. Nakano¹、M. Sugiyama¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2010.K-6-5