[K-8-1] Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition

M. Myronov¹、K. Sawano²、D. R. Leadley¹、Y. Shiraki² (1.Univ. of Warwick , UK、2.Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.K-8-1