[K-8-6] Epitaxial NiSi₂ Buffer Technique for Fluoride Resonant Tunneling Devices on Si

K. Takahashi¹、Y. Yoshizumi¹、Y. Fukuoka¹、N. Saito¹、K. Tsutsui¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.K-8-6