[P-1-10] Temperature Dependence of Exclusive SiO₂Formation during Thermal Oxidation of Si_1-X Ge_X Alloy Layer on Si(001) Surfaces

H. Hozumi¹、S. Ogawa¹、A. Yoshigoe²、S. Ishidzuka³、J. R. Harries²、Y. Teraoka²、Y. Takakuwa¹ (1.Tohoku Univ.、2.JAEA、3.Akita Nat. Col. Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-10