Temperature Dependence of Exclusive SiO2Formation during Thermal Oxidation of Si1-X GeX Alloy Layer on Si(001) Surfaces

H. Hozumi; S. Ogawa; A. Yoshigoe; S. Ishidzuka; J. R. Harries; Y. Teraoka; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2010.P-1-10

[P-1-10] Temperature Dependence of Exclusive SiO₂Formation during Thermal Oxidation of Si_1-X Ge_X Alloy Layer on Si(001) Surfaces

H. Hozumi¹, S. Ogawa¹, A. Yoshigoe², S. Ishidzuka³, J. R. Harries², Y. Teraoka², Y. Takakuwa¹ (1.Tohoku Univ., 2.JAEA, 3.Akita Nat. Col. Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-10

2010 International Conference on Solid State Devices and Materials

[P-1-10] Temperature Dependence of Exclusive SiO2Formation during Thermal Oxidation of Si1-X GeX Alloy Layer on Si(001) Surfaces

[P-1-10] Temperature Dependence of Exclusive SiO₂Formation during Thermal Oxidation of Si_1-X Ge_X Alloy Layer on Si(001) Surfaces