Annealing Effects on Ge/SiO<sub>2</sub> interface Structure in wafer-bonded germanium-on-insulator substrates

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

O. Yoshitake¹, J. Kikkawa¹, Y. Nakamura¹, A. Sakai¹, E. Toyoda², H. Isogai², K. Izunome² (1.Osaka Univ., 2.Covalent Silicon Co., Ltd. , Japan)