The Japan Society of Applied Physics

[P-1-19] Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure

H. Ofuchi1, H. Kamada2, S. Toyoda2,3,4, H. Kumigashira2,3,4, T. Sukegawa5, K. Iwamoto5, Z. Liu5, M. Oshima2,3,4 (1.JASRI, 2.Univ. of Tokyo, 3.UT-SRRO, 4.JST-CREST, 5.STARC , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-19