[P-1-19] Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure

H. Ofuchi¹、H. Kamada²、S. Toyoda^2,3,4、H. Kumigashira^2,3,4、T. Sukegawa⁵、K. Iwamoto⁵、Z. Liu⁵、M. Oshima^2,3,4 (1.JASRI、2.Univ. of Tokyo、3.UT-SRRO、4.JST-CREST、5.STARC , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-19