[P-1-19] Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure

H. Ofuchi¹, H. Kamada², S. Toyoda^2,3,4, H. Kumigashira^2,3,4, T. Sukegawa⁵, K. Iwamoto⁵, Z. Liu⁵, M. Oshima^2,3,4 (1.JASRI, 2.Univ. of Tokyo, 3.UT-SRRO, 4.JST-CREST, 5.STARC , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-19