[P-1-26L] Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure

K. Kato¹, M. Sakashita¹, W. Takeuchi¹, H. Kondo¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-26L