Evaluation of Si/SiO<sub>2</sub> Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method

P. C. Huang; S. L. Wu; S. J. Chang; J. F. Chen; Y. T. Huang; D. G. Hong; C. Y. Chang; C. Y. Wu; C. T. Lin; M. Ma; O. Cheng

doi:https://doi.org/10.7567/SSDM.2010.P-1-3

[P-1-3] Evaluation of Si/SiO₂ Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method

P. C. Huang¹、S. L. Wu²、S. J. Chang¹、J. F. Chen¹、Y. T. Huang¹、D. G. Hong²、C. Y. Chang¹、C. Y. Wu²、C. T. Lin³、M. Ma³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-1-3

2010 International Conference on Solid State Devices and Materials

[P-1-3] Evaluation of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method

[P-1-3] Evaluation of Si/SiO₂ Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method