[P-1-4] Efficient Activation of As in Ultrashallow Junction Induced by Thermal Plasma Jet Microsecond Annealing

K. Matsumoto¹, S. Higashi¹, H. Murakami¹, S. Miyazaki¹ (1.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-4