[P-1-4] Efficient Activation of As in Ultrashallow Junction Induced by Thermal Plasma Jet Microsecond Annealing

K. Matsumoto¹、S. Higashi¹、H. Murakami¹、S. Miyazaki¹ (1.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-4