[P-1-5] Depth Profile and Retained Dose in SiO₂/Si Structure for B₁₈H_X⁺ Implantation

Y. Kawasaki^1,2、H. Yoshimura¹、K. Asai¹、K. Shibahara² (1.Renesas Electronics Corp.、2.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-5