The Influence of La and Zr Doping on TDDB Characteristics of HfO<sub>2</sub> Thin Films

H. W. Chen; C. H. Liu; S. Y. Chen; Y. W. Liao; H. W. Hsu; H. S. Huang; L. W. Cheng

doi:https://doi.org/10.7567/SSDM.2010.P-1-9

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[P-1-9] The Influence of La and Zr Doping on TDDB Characteristics of HfO₂ Thin Films

H. W. Chen¹、C. H. Liu²、S. Y. Chen¹、Y. W. Liao¹、H. W. Hsu¹、H. S. Huang¹、L. W. Cheng³ (1.National Taipei Univ. of Tech.、2.National Taiwan Normal Univ.、3.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-1-9

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2010 International Conference on Solid State Devices and Materials

[P-1-9] The Influence of La and Zr Doping on TDDB Characteristics of HfO2 Thin Films

[P-1-9] The Influence of La and Zr Doping on TDDB Characteristics of HfO₂ Thin Films