Temperature Dependence of Charge Transport in Polythiophene-Based Field-Effect Transistors

M. Yoshikawa; T. Banno; T. Nagase; T. Kobayashi; S. Murakami; H. Naito

doi:https://doi.org/10.7567/SSDM.2010.P-10-19

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-10-19] Temperature Dependence of Charge Transport in Polythiophene-Based Field-Effect Transistors

M. Yoshikawa¹, T. Banno¹, T. Nagase¹, T. Kobayashi¹, S. Murakami², H. Naito¹ (1.Osaka Prefecture Univ., 2.Tech. Res. Inst. of Osaka Prefecture , Japan)

https://doi.org/10.7567/SSDM.2010.P-10-19

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