[P-12-4] HCP-disordered CoPt electrode and exchange control layer for MgO based perpendicular magnetic tunnel junctions
W. Lim1, S. C. Oh1, J. H. Jeong1, W. J. Kim1, Y. H. Kim1, H. J. Shin1, J. E. Lee1, S. Choi1, C. Chung1
(1.Samsung Electronics Co., Ltd. , Korea)
https://doi.org/10.7567/SSDM.2010.P-12-4
