[P-12-4] HCP-disordered CoPt electrode and exchange control layer for MgO based perpendicular magnetic tunnel junctions

W. Lim¹、S. C. Oh¹、J. H. Jeong¹、W. J. Kim¹、Y. H. Kim¹、H. J. Shin¹、J. E. Lee¹、S. Choi¹、C. Chung¹ (1.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.P-12-4