[P-13-12] Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate- All-Around PMOS Silicon Nanowire Field-Effect-Transistors

B. H. Hong¹、S. J. Lee¹、S. W. Hwang¹、Y. Y. Lee²、D. Ahn²、K. H. Cho³、K. H. Yeo³、D. W. Kim³、G. Y. Jin³、D. Park³ (1.Korea Univ.、2.Univ. of Seoul、3.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.P-13-12