[P-13-12] Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate- All-Around PMOS Silicon Nanowire Field-Effect-Transistors

B. H. Hong¹, S. J. Lee¹, S. W. Hwang¹, Y. Y. Lee², D. Ahn², K. H. Cho³, K. H. Yeo³, D. W. Kim³, G. Y. Jin³, D. Park³ (1.Korea Univ., 2.Univ. of Seoul, 3.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.P-13-12