Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

M. Inagaki; H. Suzuki; A. Suzuki; K. Mutaguchi; A. Fukuyama; N. Kojima; Y. Ohshita; M. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2010.P-14-11

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[P-14-11] Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

M. Inagaki¹、H. Suzuki²、A. Suzuki²、K. Mutaguchi²、A. Fukuyama²、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Technological Inst.、2.Univ. of Miyazaki , Japan)

https://doi.org/10.7567/SSDM.2010.P-14-11

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