Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

M. Inagaki; H. Suzuki; A. Suzuki; K. Mutaguchi; A. Fukuyama; N. Kojima; Y. Ohshita; M. Yamaguchi

doi:https://doi.org/10.7567/SSDM.2010.P-14-11

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-14-11] Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

M. Inagaki¹, H. Suzuki², A. Suzuki², K. Mutaguchi², A. Fukuyama², N. Kojima¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Technological Inst., 2.Univ. of Miyazaki , Japan)

https://doi.org/10.7567/SSDM.2010.P-14-11

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