[P-3-11] Electrically Detected Magnetic Resonance Study of Interfacial Traps in a Nitrided Submicron Metal-Oxide-Semiconductor Field Effect Transistor

Y. Yonamoto¹、N. Akamatsu¹ (1.Hitachi, Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-11