[P-3-12] Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology

H. Tsuboi¹、K. Inaba¹、Y. Hayashi¹、H. Sato¹、Y. Obara¹、Y. Suzuki¹、T. Miyagawa¹、S. Nakamura¹、R. Nagumo¹、R. Miura¹、A. Suzuki¹、N. Hatakeyama¹、A. Endou¹、H. Takaba¹、M. Kubo¹、A. Miyamoto¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-12