Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology

H. Tsuboi; K. Inaba; Y. Hayashi; H. Sato; Y. Obara; Y. Suzuki; T. Miyagawa; S. Nakamura; R. Nagumo; R. Miura; A. Suzuki; N. Hatakeyama; A. Endou; H. Takaba; M. Kubo; A. Miyamoto

doi:https://doi.org/10.7567/SSDM.2010.P-3-12

[P-3-12] Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology

H. Tsuboi¹, K. Inaba¹, Y. Hayashi¹, H. Sato¹, Y. Obara¹, Y. Suzuki¹, T. Miyagawa¹, S. Nakamura¹, R. Nagumo¹, R. Miura¹, A. Suzuki¹, N. Hatakeyama¹, A. Endou¹, H. Takaba¹, M. Kubo¹, A. Miyamoto¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-12

2010 International Conference on Solid State Devices and Materials

[P-3-12] Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology