The Japan Society of Applied Physics

[P-3-20] High Specific Contact Resistance of Ohmic Contacts to n-Ge Source/Drain and Low Transport Characteristics of Ge nMOSFETs

J. Oh1, J. Huang1, Y. T. Chen2, I. Ok1, K. Jeon3, S. H. Lee2, B. Sassman1, W. Y. Loh1, H. D. Lee4, D. H. Ko5, P. D. Kirsch1, R. Jammy1 (1.SEMATECH, 2.Univ. of Texas at Austin, 3.Univ. of California Berkeley , USA, 4.Chungnam Nat'l Univ., 5.Yonsei Univ. , Korea)

https://doi.org/10.7567/SSDM.2010.P-3-20