Effect of MIM type selection device on readout margin of cross-point bipolar ReRAM

J. Shin; I. Kim; J. Park; J. Lee; M. Jo; K. P. Biju; S. Jung; W. Lee; S. Kim; S. Park; D. Lee; H. Hwang

doi:https://doi.org/10.7567/SSDM.2010.P-4-2

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-4-2] Effect of MIM type selection device on readout margin of cross-point bipolar ReRAM

J. Shin¹, I. Kim¹, J. Park¹, J. Lee¹, M. Jo¹, K. P. Biju¹, S. Jung¹, W. Lee¹, S. Kim¹, S. Park¹, D. Lee¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

https://doi.org/10.7567/SSDM.2010.P-4-2

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