Impact of Engineered Buried Ti layer on the Memory Performance of HfOx RRAM

P. S. Chen; H. Y. Lee; Y. S. Chen; P. Y. Gu; F. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2010.P-4-7

[P-4-7] Impact of Engineered Buried Ti layer on the Memory Performance of HfOx RRAM

P. S. Chen¹, H. Y. Lee^2,3, Y. S. Chen^2,3, P. Y. Gu², F. Chen², M. J. Tsai² (1.MingShin University of Science & Technology, 2.Indus. Tech. Res. Inst., 3.National Tsing Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-4-7

2010 International Conference on Solid State Devices and Materials

[P-4-7] Impact of Engineered Buried Ti layer on the Memory Performance of HfOx RRAM