[P-4-9] Evaluation of ALD grown strontium-doped HfO2 thin films as capacitor dielectric for 40nm DRAM Device and beyond
J. S. Lim1, J. H. Choi1, S. J. Chung1, S. Y. Kang1, M. Y. Park1, Y. Kim1, K. Cho1, C. Y. Yoo1
(1.Samsung Electronics Co., Ltd. , Korea)
https://doi.org/10.7567/SSDM.2010.P-4-9
