[P-4-9] Evaluation of ALD grown strontium-doped HfO₂ thin films as capacitor dielectric for 40nm DRAM Device and beyond

J. S. Lim¹、J. H. Choi¹、S. J. Chung¹、S. Y. Kang¹、M. Y. Park¹、Y. Kim¹、K. Cho¹、C. Y. Yoo¹ (1.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.P-4-9