Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH4)2SX Surface Treatment

T. H. Kim; C. J. Lee; D. S. Kim; S. Y. Sung; B. K. Jung; Y. W. Heo; J. H. Lee; S. H. Hahm

doi:https://doi.org/10.7567/SSDM.2010.P-6-12

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment

T. H. Kim¹, C. J. Lee¹, D. S. Kim¹, S. Y. Sung¹, B. K. Jung², Y. W. Heo¹, J. H. Lee¹, S. H. Hahm¹ (1.Kyungbook National Univ., 2.Electronics and Telecommunications Res. Inst. , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-12

2010 International Conference on Solid State Devices and Materials

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH4)2SX Surface Treatment

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment