Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH4)2SX Surface Treatment

T. H. Kim; C. J. Lee; D. S. Kim; S. Y. Sung; B. K. Jung; Y. W. Heo; J. H. Lee; S. H. Hahm

doi:https://doi.org/10.7567/SSDM.2010.P-6-12

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment

T. H. Kim¹、C. J. Lee¹、D. S. Kim¹、S. Y. Sung¹、B. K. Jung²、Y. W. Heo¹、J. H. Lee¹、S. H. Hahm¹ (1.Kyungbook National Univ.、2.Electronics and Telecommunications Res. Inst. , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-12

2010 International Conference on Solid State Devices and Materials

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH4)2SX Surface Treatment

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment