[P-6-2] Low Gate Leakage Current InAlAs/InGaAs Metamorphic HEMTs Using HBr + UV Illumination Gate Treatment Technology

C. H. Chen¹、C. W. Yang¹、C. K. Lin¹、H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-6-2