[P-6-2] Low Gate Leakage Current InAlAs/InGaAs Metamorphic HEMTs Using HBr + UV Illumination Gate Treatment Technology

C. H. Chen¹, C. W. Yang¹, C. K. Lin¹, H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-6-2