The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness

K. S. Jeong; Y. S. Kim; J. G. Park; S. D. Yang; Y. M. Kim; H. J. Yun; H. D. Lee; G. W. Lee

doi:https://doi.org/10.7567/SSDM.2010.P-6-3

[P-6-3] The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness

K. S. Jeong¹, Y. S. Kim², J. G. Park¹, S. D. Yang¹, Y. M. Kim¹, H. J. Yun¹, H. D. Lee¹, G. W. Lee¹ (1.Chungnam National Univ., 2.National NanoFab Center , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-3

2010 International Conference on Solid State Devices and Materials

[P-6-3] The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness