10-Gb/s InGaAs P-I-N photodetector with planar buried heterostructure

Y. S. Wang; S. J. Chang; Y. Z. Chiou; S. P. Chang; Y. H. Wu; R. T. Hsu; W. Lin

doi:https://doi.org/10.7567/SSDM.2010.P-6-8

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[P-6-8] 10-Gb/s InGaAs P-I-N photodetector with planar buried heterostructure

Y. S. Wang^1,3、S. J. Chang¹、Y. Z. Chiou²、S. P. Chang¹、Y. H. Wu³、R. T. Hsu³、W. Lin³ (1.National Cheng Kung Univ.、2.Southern Taiwan University、3.LandMark Optoelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-6-8

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